| PART |
Description |
Maker |
| UPD45128163-A75L |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
| UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9J |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| UPD45128163-T UPD45128163G5-A10LT-9JF UPD45128163G |
128M-BIT SYNCHRONOUS DRAM 4-BANK, LVTTL WTR (WIDE TEMPERATURE RANGE)
|
ELPIDA[Elpida Memory]
|
| HYB39S512400AEL-7.5 |
128M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| M2V28S40ATP-7L M2V28S30ATP-7L M2V28S20ATP-7L M2V28 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| HY57V28820AT HY57V28820AT-H |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| EBS11RC4ACNA-7A EBS11RC4ACNA EBS11RC4ACNA-75 |
1 GB Registered SDRAM DIMM 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
http://
ELPIDA[Elpida Memory]
Elpida Memory, Inc.
DRAM
|
| MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
